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SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION. FEATURES
Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary to KTB778.
B E
U A
KTD998
TRIPLE DIFFUSED NPN TRANSISTOR
C R W V W
L
M D
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 120 120 5 10 1 80 150 -55 150 UNIT V V V A A W
J
N
K
I
H O O
1
2
3
1. BASE 2. COLLECTOR 3. EMITTER
DIM MILLIMETERS A 16.30 MAX _ B 12.00 + 0.30 _ C 5.50 + 0.20 D 1.20 MAX 8.00 E F 5.00 _ G 17.00 + 0.30 H 0.60+0.15/-0.10 2.50 I _ 20.0 + 0.1 J 4.00 K L 2.00 M 2.20 MAX 3.05 MAX N 5.45 O P 3.50 Q 1.00 _ R 3.00 + 0.20 S 37.0 T 42.0 U 3.40+0.15/-0.10 V 10 W 8
G
F
Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
Q
P
TO-3P(H)IS
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification R:55 110, O:80 160
)
TEST CONDITION VCB=120V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 VCE=5V, IC=1A IC=5A, IB=0.5A VCE=5V, IC=5A VCE=5V, IC=1A VCB=10V, IE=0, f=1MHz MIN. 120 55 TYP. 12 170 MAX. 10 10 160 2.5 1.5 V V MHz pF UNIT A A V ICBO IEBO
SYMBOL
V(BR)CEO hFE (Note) VCE(sat) VBE fT Cob
1996. 2. 9
Revision No : 1
S T
1/2
KTD998
I C - VCE
12 COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE 10 8 6 4 2 0 0 2 4 6 8
400 300 COMMON EMITTER Tc=25 C 200
h FE - IC
1k 500 300
Tc=100 C Tc=25 C Tc=-25 C COMMON EMITTER VCE =5V
100 50 I B =20mA 0
100 50 30
10
12
14
10 0.01
0.03
0.1
0.3
1
3
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (A)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 1 0.5 0.3
COMMON EMITTER I C /I B =10
SAFE OPERATING AREA
30
I C MAX(PULSED) *
COLLECTOR CURRENT I C (A)
10 3
I C MAX(CONTINUOUS)
DC 5 O 00 Tc PER mS =2 A 5 TI C ON *
t=1mS * 10mS * 100mS *
0.1 0.05 0.03
Tc=1
00 C
Tc=25 C Tc=-25 C
1
VCEO MAX. * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WIHT INCREASE IN TEMPERATURE.
0.01 0.01
0.3
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I C (A)
0.1 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V)
Pc - Ta
COLLECTOR POWER DISSIPATION P C (W) 100 80 60 40 20 0
2 1 1 2 3 4
Ta=Tc INFINITE HEAT SINK 300x300x2mm Al HEAT SINK 200x200x2mm Al HEAT SINK 100x100x2mm Al HEAT SINK
5
3
4 5
NO HEAT SINK
0
40
80
120
160
200
240
AMBIENT TEMPERATURE Ta ( C)
1996. 2. 9
Revision No : 1
2/2

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